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Advanced Technical Information
HiPerFETTM Power MOSFETs
Q-Class
IXFK 52N60Q2 IXFX 52N60Q2
VDSS ID25 RDS(on)
= = =
600 V 52 A 115 m
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 600 600 30 40 52 208 52 75 4.0 20 735 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
trr 250 ns
PLUS 247TM (IXFX)
G
D (TAB) D
TO-264 AA (IXFK)
G
D
S
D (TAB) D = Drain TAB = Drain
0.9/6 Nm/lb.in. 6 10 g g
G = Gate S = Source
Features Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.0 4.5 200 TJ = 25C TJ = 125C 50 2 V V nA A mA Advantages Easy to mount Space savings High power density Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
115 m
(c) 2003 IXYS All rights reserved
DS98982A(12/03)
IXFK 52N60Q2 IXFX 52N60Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 6800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 225 23 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1.0 (External), 13 56 8.5 198 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 43 94 0.17 TO-264 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 52 208 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1 10
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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